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The Application of GaAs TCAD in Industry

Published online by Cambridge University Press:  10 February 2011

P. A. Blakey ,
Deepak ,
K. Johnson ,
C. Recker  and
S. Varadarajan
P. A. Blakey
Affiliation:
Motorola, Inc., MD:EL720, 2100 E. Elliot Road, Tempe, AZ 85284
Deepak
Affiliation:
Motorola, Inc., MD:EL720, 2100 E. Elliot Road, Tempe, AZ 85284
K. Johnson
Affiliation:
Motorola, Inc., MD:EL720, 2100 E. Elliot Road, Tempe, AZ 85284
C. Recker
Affiliation:
Motorola, Inc., MD:EL720, 2100 E. Elliot Road, Tempe, AZ 85284
S. Varadarajan
Affiliation:
Motorola, Inc., MD:EL720, 2100 E. Elliot Road, Tempe, AZ 85284
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Abstract

The implementation and application of GaAs technology CAD for industrial research and development are described. Existing silicon-oriented software was modified extensively to make it applicable to the simulation of GaAs processes and devices. RF-oriented post-processing capabilities were implemented, and effective applications methodologies were developed. Examples of the practical application of GaAs technology CAD are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 83
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. GATES User Manual, Version 5.0, 1995, Gateway Modeling, Inc., MinneapolisGoogle Scholar
2. Asbeck, P. M., Lee, C.-P. and Chang, M-C. F., IEEE Trans. Electron Dev., 31, pp. 1377–1380, 1984 Google Scholar
3. Blakey, P. A., Khazhinsky, M. G. and Loechelt, G. H. in IEEE EDMO Workshop Proceedings. Leeds, England, November 1996, IEEE Catalog Number: 96TH8155, pp. 14–19.Google Scholar
4. Tomizawa, M., Uchida, M. and Sugeta, T., IEEE Trans. Electron Dev., 31, pp. 435–439, 1984 Google Scholar
5. Tanaka, T., Furukawa, H., Takenaka, H., Ueda, T., Fukui, T. and Ueda, D., IEEE Trans. Electron Dev., 44, pp. 354–359, 1997 Google Scholar
6. Heliodore, F., Lefebvre, M., Salmer, G. and El-Sayed, O. L., IEEE Trans. Electron Dev., 35, pp. 824–830, 1988 Google Scholar