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Application of Cluster Ion Beam Smoothing to SiC and YBCO Surfaces

Published online by Cambridge University Press:  10 February 2011

D. Fathy ,
O. W. Holland ,
R. Liu ,
J. Wosik  and
W. K Chu
D. Fathy
Affiliation:
Texas Center for superconductivity, University of Houston, Houston, TX 77204,
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831–6048, USA
R. Liu
Affiliation:
Texas Center for superconductivity, University of Houston, Houston, TX 77204,
J. Wosik
Affiliation:
Texas Center for superconductivity, University of Houston, Houston, TX 77204,
W. K Chu
Affiliation:
Texas Center for superconductivity, University of Houston, Houston, TX 77204,
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Abstract

Optimization of the surface topography, especially in high-temperature superconductors (HTS) and silicon carbide is crucial for device processing. Surface smoothing in these materials was investigated using Gas Cluster Ion Beams (GCIB) capable of delivering cluster ions of ≥ 2000 Ar atoms with energies of up to 30keV. Examination of the surface topography after cluster-ion irradiation was done using cross-sectional transmission electron microscopy (TEM) and atomic force microscopy (AFM). The results indicate that typical as-deposited YBCO films on MgO substrates have an average roughness of the order of 40 nm, and interpeak distance between 300–600 nm. Application of GCIB to the surface planarization reduces the roughness to only 10 nm. Also power handling and microwave surface resistance of the YBCO film and its relationship to surface smoothness are reported. Similar observations using bulk SiC are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 313
Copyright
Copyright © Materials Research Society 2000

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