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APCVD SiCxOy Deposition as Na Barrier Layers for TCO/Low-E Glass Coatings

Published online by Cambridge University Press:  31 January 2011

Wei Zhang ,
Tom Salagaj ,
Christopher Jensen ,
Karlheinz Strobl  and
Michael Davies
Wei Zhang
Affiliation:
[email protected], CVD Equipment Corp., CVD Applications Laboratory, Ronkonkoma, New York, United States
Tom Salagaj
Affiliation:
[email protected], CVD Equipment, Ronkonkoma, New York, United States
Christopher Jensen
Affiliation:
[email protected], United States
Karlheinz Strobl
Affiliation:
[email protected], United States
Michael Davies
Affiliation:
[email protected], Sixtron Advanced Materials, Dorval, Canada
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Abstract

We report on the experimental investigation of the use of Sixtron Advanced Materials Silane-free gas generation system to deposit a transparent SiCxOy Na-diffusion barrier and anti-reflection film (for subsequent TCO thin film coatings) onto glass sheets with an APCVD deposition process. SiCxOy thin films (50-250nm thickness) with a tunable index of 1.65-1.75 are currently being deposited by APCVD On-line float glass coating systems depositing Transparent Conductive Oxide (TCO) coatings (both for Low-E windows and for solar panel manufacturing applications these coatings typically have a refractive index of about 1.9) using, for example, gaseous Silane (SiH4), Propylene or Ethylene and Oxygen. Such a barrier film is critical for achieving high transparency through its anti-reflection properties having an intermediate index, i.e. close to the value of to achieve high conductivity for subsequent deposited TCO layers and to improve the longevity of the TCO coating performance through its Na-diffusion barrier properties. The Sixtron's Silane-free gas generation system uses a solid material as starting source that is safe for shipping by airand thus removes many of the safety and cost concerns involved with handling and exchanging of hazardous Silane gas cylinders at the thin film production site. A successful transfer of this alternative Si-precursor material to the proprietary CVDgCoat™ APCVD coating platform under development by CVD Equipment corporation would enable the manufacturing and operation of safer and lower cost On-line and Off-line APCVD thin film glass coating systems for the fast growing coated glass sheet market driven by the growing alternative energy demand for both energy saving and energy generation materials.

Keywords

barrier layerchemical vapor deposition (CVD) (chemical reaction)optical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1220: Symposium BB – Green Chemistry in Research and Development of Advanced Materials , 2009 , 1220-BB02-02
Copyright
Copyright © Materials Research Society 2010

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References

[1]. Gordon, R. G. Proscia, J. Ellis, F. B. Jr., Delahoy, A. E. Sol. Energy Mater. 1989, 18, 263.Google Scholar
[2]. Singh, K. Tamakloe, R. Y. Sol. Energy 56(4), 343 (1996).Google Scholar
[3]. Lindner, G.H. US Patent 4737388 1988.Google Scholar
[4]. Gerhardinger, P.F. McCurdy, R.J. Mat. Res. Soc. Symp. Proc. 426, 399 (1996).Google Scholar
[5]. Liang, H. and Gordon, R.G. J. Mater. Sci. 42, 6388 (2007)Google Scholar
[6]. Soubeyrand, M. J. Halliwell, A.C. US Patent 5698262 1997.Google Scholar
[7]. Athey, P. R. Dauson, D. S. Lecocq, D.E. Neuman, G. A. Sopko, J. F. Stewart-Davie, R.L. US Patent 5464657 1995.Google Scholar
[8]. Goodman, R. D. Greenberg, W. M. Tausch, P. J. US Patent 4847157 1989.Google Scholar
[9]. Henery, V. A. US Patent 4853257 1989.Google Scholar
[10]. Middleton, D. J. Grenier, J. I. US Patent 4548836 1985.Google Scholar
[11]. Gordon, R. G. US Patent 4, 187, 336 1980.Google Scholar
[12]. Athey, P.R. Dauson, D.S. Lecocq, D.E. Neuman, G.A. Sopko, J.F. Stewart-Davie, R.L. US Patent 5464657 1995.Google Scholar
[13]. Gordon, R. G. US Patent 4,206,252 1980.Google Scholar
[14]. Gordon, R. G. US Patent 4, 308,316 1981.Google Scholar
[15]. Gordon, R. G. US Patent 4, 440,822 1984.Google Scholar
[16]. Gordon, R. G. US Patent 4, 377,613 1983.Google Scholar
[17]. Gordon, R. G. US Patent 4, 419,386 1983.Google Scholar
[18]. Gordon, R. G. US Patent 4, 612,217 1986.Google Scholar
[19]. Zhang, W., Salagaj, T., Wei, J., Jensen, C., and Strobl, K., 2009 Materials Research Society (MRS) Fall Meeting, Nov. 30- Dec. 4, 2009 Boston, MA, U.S.A (in press) Google Scholar
[20].Goodman, et al. US Patent 5.087, 525.Google Scholar