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Anti-Weak-Localization Study of Rashba Spin-Splitting Energy as a Function of Well Asymmetry in InAlAs/InGaAs/InAlAs Quantum Wells

Published online by Cambridge University Press:  17 March 2011

Takaaki Koga ,
Junsaku Nitta ,
Tatsushi Akazaki  and
Hideaki Takayanagi
Takaaki Koga
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, Morinosato-Wakamiya 3-1, Atsugi, Kanagawa, 243-0198, Japan
Junsaku Nitta
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, Morinosato-Wakamiya 3-1, Atsugi, Kanagawa, 243-0198, Japan
Tatsushi Akazaki
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, Morinosato-Wakamiya 3-1, Atsugi, Kanagawa, 243-0198, Japan
Hideaki Takayanagi
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, Morinosato-Wakamiya 3-1, Atsugi, Kanagawa, 243-0198, Japan
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Abstract

We have investigated the values of the Rashba spin-orbit coupling constant α in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum wells using an anti-weak-localization (AWL) analysis as a function of quantum well asymmetry. We have found that the deduced α values have strong correlations with the structural inversion asymmetry of the pertinent quantum wells as predicted theoretically. This fact suggests that the AWL analysis provides a reliable way to deduce α values experimentally for designing future spintronics devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F3.12
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Prinz, G. A., Physics Today 48(4), 58 (1995); G. A. Prinz, Science 282, 1660 (1998).Google Scholar
2. Datta, S. and Das, B., Appl. Phys. Lett. 56, 665 (1990).Google Scholar
3. Nitta, J., Meijer, F. E., and Takayanagi, H., Appl. Phys. Lett. 75, 695 (1999).Google Scholar
4. Qian, T.-Z. and Su, Z.-B., Phys. Rev. Lett. 72, 2311 (1994).Google Scholar
5. Koga, T., Nitta, J., Takayanagi, H., and Datta, S., Phys. Rev. Lett. in press (2002).Google Scholar
6. Rashba, E. I., Sov. Phys. Solid State 2, 1109 (1960) [Fiz. Tverd. Tela (Leningrad) 2, 1224 (1960)]; Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984).Google Scholar
7. Nitta, J., Akazaki, T., Takayanagi, H., and Enoki, T., Phys. Rev. Lett. 78, 1335 (1997).Google Scholar
8. Engels, G., Lange, J., Schäpers, Th., and Lüth, H., Phys. Rev. B 55, R1958 (1997).Google Scholar
9. Schäpers, Th., Engels, G., Lange, J., Klocke, Th., Hollfelder, M., and Lüth, H., J. Appl. Phys. 83, 4324 (1998).Google Scholar
10. Grundler, D., Phys. Rev. Lett. 84, 6074 (2000).Google Scholar
11. Chen, G. L., Han, J., Huang, T. T., Datta, S., and Janes, D. B., Phys. Rev. B 47, 4084 (1993).Google Scholar
12. Ohkawa, F. J. and Uemura, Y., J. Phys. Soc. Jpn. 37, 1325 (1974).Google Scholar
13. Därr, A., Kotthaus, J. P., and Ando, T., in Proceedings of the 13th International Conference on the Physics of Semiconductors, edited by Fumi, F. G. (North-Holland, Amsterdam, 1976), p. 774.Google Scholar
14. Pfeffer, P. and Zawadzki, W., Phys. Rev. B 59, R5312 (1999).Google Scholar
15. Rowe, A. C. H., Nehls, J., Stradling, R. A., and Ferguson, R. S., Phys. Rev. B 63, 201307(R) (2001).Google Scholar
16. Brosig, S., Ensslin, K., Warburton, R. J., Nguyen, C., Brar, B., Thomas, M., and Kroemer, H., Phys. Rev. B 60, 13989 (1999).Google Scholar
17. Koga, T., Nitta, J., Akazaki, T., and Takayanagi, H., unpublished (2001).Google Scholar
18. Koga, T., Nitta, J., Akazaki, T., and Takayanagi, H., Proc. NGS 10, IPAP Conf. Series 2, 227 (2001).Google Scholar
19. Koga, T., Nitta, J., Akazaki, T., and Takayanagi, H., to be published in the special issue of Physica E for the 10th International Conference on Modulated Semiconductor Structures (MSS10), (2002).Google Scholar
20. Iordanskii, S. V., Lyanda-Geller, Yu. B., and Pikus, G. E., JETP Lett. 60, 206 (1994).Google Scholar
21. Bergmann, G., Physics Reports 107, 1 (1984).Google Scholar
22. Elliott, R. J., Phys. Rev. 96, 266 (1954).Google Scholar
23. D'yakanov, M. I. and Perel', V. I., Sov. Phys. JEPT 33, 1053 (1971) [Zh. Eksp. Teor. Fiz 60, 1954 (1971)].Google Scholar
24. Dresselhaus, P. D., Papavassiliou, C. M. A., Wheeler, R. G., and Sacks, R. N., Phys. Rev. Lett. 68, 106 (1992).Google Scholar