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ANTIPHASE DOMAIN FREE EPITAXIAL GROWTH OF GaAs ON (100)Ge

Published online by Cambridge University Press:  28 February 2011

Y. Shinoda  and
Y. Ohmachi
Y. Shinoda
Affiliation:
NTT Electrical Communications Laboratories, Musashino-shi, Tokyo 180, Japan.
Y. Ohmachi
Affiliation:
NTT Electrical Communications Laboratories, Musashino-shi, Tokyo 180, Japan.
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Abstract

High-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 79
Copyright
Copyright © Materials Research Society 1986

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