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Anomalous Solid Phase Epitaxy Near the Compensation Point in Amorphous Silicon with Boron and Phosphorus Impurity Profiles

Published online by Cambridge University Press:  26 February 2011

Young-Jin Jeon ,
M. F. Becker  and
R. M. Walserd
Young-Jin Jeon
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX. 78712, U.S.A.
M. F. Becker
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX. 78712, U.S.A.
R. M. Walserd
Affiliation:
J.H. Herring Centennial Professor in Engineering, The University of Texas, Austin, TX. 78712, U.S.A.
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Abstract

We made high precision cw laser interferometric measurements of the variations of the rate of solid phase epitaxial regrowth (SPER) of amorphous layers on (100) silicon implanted with both boron and phosphorus. Depth profiles of SPER were correlated with the implanted boron and phosphorus distributions measured by secondary ion mass spectroscopy (SIMS). The results showed that: (1) the minimum (SPER) rate did not occur at the depth where the implanted impurity concentrations were equal; (2) the maximum activation energy for SPER (∼2.9 eV; ≈0.18 eV greater than for SPER in intrinsic Si) occurred at the depth where the regrowth rate was a minimum; (3) the regrowth rates in the dual implanted sample were different from those of the samples doped only with phosphorus at the same net phosphorusc concentration; and (4) the rate at the depth where the impurity concentrations were equal was different from the intrinsic rate. Further interpretation of the results suggests that the SPER rate in the dual implanted samples is equal to the value for intrinsic silicon at a depth where the net ionized impurity concentration is compensated. The SPER rate was a minimum at a depth where the net ionized impurity concentration was slightly p type.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 51
Copyright
Copyright © Materials Research Society 1992

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