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Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

Published online by Cambridge University Press:  01 February 2011

Hannan Assaf ,
Esidor Ntsoenzok ,
Marie-France Barthe ,
Elisa Leoni ,
Marie-Odile Ruault  and
S. Ashok
Hannan Assaf
Affiliation:
[email protected], CNRS, Centre d'Etudes et de Recherches par Irradiation CERI, 3A rue de la Férollerie, Orléans, 45071, France, +33238257604, +33238630271
Esidor Ntsoenzok
Affiliation:
[email protected], CERI-CNRS, 3A, rue de la Férollerie, Orléans, 45071, France
Marie-France Barthe
Affiliation:
[email protected], CERI-CNRS, 3A, rue de la Férollerie, Orléans, 45071, France
Elisa Leoni
Affiliation:
[email protected], CERI-CNRS, 3A, rue de la Férollerie, Orléans, 45071, France
Marie-Odile Ruault
Affiliation:
[email protected], CSNSM, CNRS-IN2P3, Batiment 108 - Université Paris Sud XI, Orsay, 91405, France
S. Ashok
Affiliation:
[email protected], The Pennsylvania State University, Department of Engineering Science and Mechanics, 212 Earth and Engineering Science Building, University Park, PA, 16802, United States
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Abstract

Thermally grown SiO2 was implanted at room temperature with 220 keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterisation of defects (bubbles, vacancy, Kr and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM were a consequence of the interaction between Kr and vacancies (V), with VnXem complexes created in the whole of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strongly desorption of Kr and the decrease in vacancy concentration.

Keywords

Krion-implantationamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F06-04
Copyright
Copyright © Materials Research Society 2007

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References

1. Caspers, L. M., Fastenau, R.H.J., Veen, A. Van, Heugten, W.F.W.M. Van, Phys. Stat. Sol. 46 a (1978) 541.Google Scholar
2. Johnson, P.B., Stevens, K.J., Thomson, R.W., Nucl. Instr. and Meth B 62 (1991) 218.Google Scholar
3. Raineri, V., Saggio, M., Rimini, E., J. Mater. Res. 15(2000).Google Scholar
4. Delamare, R., Ntsoenzok, E., Labhom, F., Veen, A. Van, Grisolia, J., Claverie, A., Nucl. Instr. and Meth B 186 (2002) 324.Google Scholar
5. Maziasz, J., J. Nucl. Mat. 122&123 (1984) 472 Google Scholar
6. McHugo, S.A., Weber, E.R., Myers, S.M., Peterson, G.A., J. Electrochem. Soc. 145 (1998) 1400.Google Scholar
7. Peterson, G.A., Myers, S.M., Follstaedt, D.M., Nucl. Instr. Meth. B 127/128 (1997) 301.Google Scholar
8. Bruel, M., Elect. Lett. 31 (1995)1201.Google Scholar
9. Ntsoenzok, E., Assaf, H., Ruault, M.O., Materials Research Society Symposium Proceedings, Vol. 864, 2005, 327–337.Google Scholar
10. Assaf, H., Ntsoenzok, E., Ruault, M.O. and Ashok, S., Materials Research Society Symposium Proceedings, Vol. 914, 2006, 439–444.Google Scholar
11. Fujinami, M. and Chilton, N.B., Appl.Phys.Lett. 62, 1131 (1993)Google Scholar
12. Guillot, B., Guissani, Y., J. Chem. Phys. 105 (1996) 255.Google Scholar