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Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

Published online by Cambridge University Press:  15 February 2011

R. P. Webb ,
M A Foad ,
R M Gwilliam ,
A P Knights  and
G. Thomas
R. P. Webb
Affiliation:
Department of Electrical Engineering, University of Surrey, Guilford, Surrey GU2 5XH, UK.
M A Foad
Affiliation:
Applied Materials Implant Division, Foundry Lane, Horsham, W Sussex RH13 5PY, UK
R M Gwilliam
Affiliation:
Department of Electrical Engineering, University of Surrey, Guilford, Surrey GU2 5XH, UK.
A P Knights
Affiliation:
Department of Electrical Engineering, University of Surrey, Guilford, Surrey GU2 5XH, UK.
G. Thomas
Affiliation:
SILVACO International, The Surrey Research Park, Guilford, Suney GU2 5YD, UK.
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Abstract

Ultra low energy boron implants (0.2 to 3 keV) have been carried out on Si (100) at doses between 1×1014cm−2 and 1×1015cm−2 using xRLEAP. The samples were annealed at temperatures between 900°C and 1050°C. The atomic profiles of these samples was measured using SIMS. Monte Carlo and diffusion simulations were performed using the SSupreme code. Comparisons between the simulations and experimental measurements show interesting differences these are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 59
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, Cal 1994.Google Scholar
[2] Foad, M, England, J, Moffatt, S and Armour, D, “Analysis of sub-1 keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated”, Presented in the Ion Implantation Technology-96, Austin Tx June 1996.Google Scholar
[3] England, J., Joyce, L., Burgess, C., Moffatt, S., Foad, M., Armour, D., and Curent, M., “The Applied Materials xRLEAP ion implanter for ultra shallow junction formation”, Presented in the Ion Implantation Technology-96, Austin Tx June 1996.Google Scholar
[4] Beardmore, K., Cai, D., Gronbech-Jensen, N., “Molecular Dynamics Simulation of Low Enery Boron and Arsenic Implant into Silicon”, to be published 1996 Google Scholar
[5] Prussin, S.A., “Modelling the Efect of Channelling”, to be published 1996 Google Scholar
[6] Caturla, M J and Diaz de la Rubia, T, presented at MRS fall meeting, Dec.'96.Google Scholar
[7] Kaabi, L., Gontrand, C., Remaki, B., Seigneur, F., and Balland, B., “Analysis of low energy implants in silicon through Si02 films: implantation damage and anomalous diffusion.” J. Microelectronics, vol 25, pp. 567–576 1994.Google Scholar
[8] Prussin, S., and Zhang, P. F., “A physical model for the role of dose and the dose rate on amorphous depth generation”, Presented in the Ion Implantation Technology-96, Austin Tx June 1996.Google Scholar
[9] Smith, S., Chia, V. K., and Yang, M. H., “Ion implaner diagnostics using Surface SIMS”, Presented in the Ion Implanation Technology-96, Austin, Tx June 1996.Google Scholar
[10] Foad, M., Webb, R.P., Gwilliam, R.M., Knights, A.P. and Thomas, G., presented at the “Ultra Shallow Junctions Meeting, North Carolina, April 1997.Google Scholar
[11] VISTA Monte Carlo program curtosey of Alexander BurenkovGoogle Scholar
[12] Caturla, M J and Diaz de la Rubia, T, presented at MRS fall meeting, Dec.'96.Google Scholar
[13] Webb, R.P., Appendix 3 in “Particle Beam Analysis” Vol 2, Eds. Seah, M. and Briggs, D., 1992 Google Scholar
[14] Silvaco Athena Users Manual, Chapter 3, October 1996.Google Scholar