Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:44:20.625Z Has data issue: false hasContentIssue false

Anomalous Branch-structured Carbon Nanotubes on Silicon Substrates

Published online by Cambridge University Press:  01 February 2011

Yaser Abdi
Affiliation:
[email protected], Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Shams Mohajerzadeh
Affiliation:
[email protected], Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Kokab Baghbani
Affiliation:
Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Sara Paydavosi
Affiliation:
Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Ebrahim Asl Soleimani
Affiliation:
Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Get access

Abstract

We have grown vertically-aligned carbon nanotubes on (100) silicon substrates by means of a plasma enhanced chemical vapor deposition method. The growth of CNTs is achieved by a mixture of hydrogen and acetylene gases in a CVD reactor and a 2-5nm thick nickel is used as the seed for the growth. Following the growth of nanotubes on the silicon substrates, they are covered by a titanium-oxide layer and then the substrate is placed back into the original chamber to expose to a hydrogen plasma. Depending on the hydrogenation step, the nickel seed layer, which is placed on the tip side of the original nanotube, is expanded. The subsequent process in the same reactor leads to the growth of carbon nanotubes in a branched manner. Scanning electron microscopy has been used to investigate the results of such tree-like nanostructures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bonard, J-M, Croci, M., Klinke, C., Conus, F., Arfaoui, I., Stockli, T. and Chatelaine, A., Carbon, 40(10), 17151728 (2002).Google Scholar
2. Milne, M.I., Teo, K.B., Amaratunga, G.A., Legaganeux, P. et al. , J. Mat. Chem., 14 (6), 933943 (2004).Google Scholar
3. Wang, Q.H., Yan, M, and Chang, R P H, Appl. Phys. Lett., 78, 12941296 (2001).Google Scholar
4. Nikolaev, P., Bronikowski, M.J., Kelley, R., Rohmund, F., Colbert, D.T., Smith, K.A. and Smalley, R.E., Chem. Phys. Lett., 313, 9197 (1999).Google Scholar
5. McEuen, P.L., Park, J., Bachtold, A., Woodside, M., Fuhrer, M.S., Bockrath, M., Shi, L., Majumdar, A., Kim, P., Annual Device Research Conference Digest, 107110 (2001).Google Scholar
6. Koohsorkhi, J., Hoseinzadegan, H., Mohajerzadeh, S. and Robertson, M., Annual Device Research Conference Digest, 5556 (2004).Google Scholar
7. Hesamzadeh, H., Ganjipour, B., Mohajerzadeh, S., Khodadadi, a., Mortazavi, Y. and Kiani, S., Carbon, vol. 42, no. 5-6, pp. 10431047 (2004).Google Scholar
8. Koohsorkhi, J., Abdi, Y., Mohajerzadeh, S., Hoseinzadegan, H. and Khakifirooz, A., Nanotech'05, pp. 238241, California, Anaheim, USA (2005).Google Scholar
9. Arvan, B., Khakifirooz, A., Tarighat, R., Mohajerzadeh, S., Goodarzi, A., Arzi, E., Mat. Sci. and Eng. B, vol.109, 1723 (2004).Google Scholar