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The Anomalous Behavior of Silicon During Nanoindentation

Published online by Cambridge University Press:  22 February 2011

G. M. Pharr
G. M. Pharr*
Affiliation:
Rice University, Department of Materials Science, P.O. Box 1892, Houston, TX 77251
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Abstract

Two separate phenomena occur during the low-load indentation of silicon which make its behavior distinctly different from that of most materials. First, silicon is one of only a very few materials whose hardness exceeds the pressure needed to transform it to a denser crystalline (or amorphous) form, and because of this, a reversible, pressure-induced phase transformation occurs during indentation. The transformation enhances the electrical conductivity of the material and creates a region around the indenter which flows like a soft metal. Second, silicon cracks when indented by a Berkovich or Vickers indenter at loads of less than 100 mN, i.e., loads typically used in nanoindentation experiments. These two phenomena, which account for a number of unusual features in the indentation load-displacement behavior, are documented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 301
Copyright
Copyright © Materials Research Society 1992

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