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Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation

Published online by Cambridge University Press:  15 February 2011

G. Ghislotti ,
B. Nielsen ,
L. F. Di Mauro ,
B. Sheey ,
P. Mutti ,
A. Pifferi ,
P. Taroni ,
L. Valentini ,
F. Corni  and
R. Tonini
G. Ghislotti
Affiliation:
Department of Applied Science, Brookhaven National Laboratory, Upton, N.Y. 11973
B. Nielsen
Affiliation:
Department of Applied Science, Brookhaven National Laboratory, Upton, N.Y. 11973
L. F. Di Mauro
Affiliation:
Department of Chemistry, Brookhaven National Laboratory, Upton, N.Y. 11973
B. Sheey
Affiliation:
Department of Chemistry, Brookhaven National Laboratory, Upton, N.Y. 11973
P. Mutti
Affiliation:
Dipartimento di Fisica, Politecnico di Milano, 20133 Milano Italy
A. Pifferi
Affiliation:
Dipartimento di Fisica, Politecnico di Milano, 20133 Milano Italy
P. Taroni
Affiliation:
Dipartimento di Fisica, Politecnico di Milano, 20133 Milano Italy
L. Valentini
Affiliation:
Dipartimento di Fisica, Politecnico di Milano, 20133 Milano Italy
F. Corni
Affiliation:
Dipartimento di Fisica, Università di Modena, Modena, Italy
R. Tonini
Affiliation:
Dipartimento di Fisica, Università di Modena, Modena, Italy
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Abstract

The annealing behavior of silicon implanted SiO2 layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 °C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 μs - 0.3 ms).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 105
Copyright
Copyright © Materials Research Society 1997

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References

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