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Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs

Published online by Cambridge University Press:  21 February 2011

D. W. Elsaesser ,
J. E. Colon ,
Y. K. Yeo ,
R. L. Hengehold  and
G. S. Pomrenke
D. W. Elsaesser
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
J. E. Colon
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
Y. K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
R. L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
G. S. Pomrenke
Affiliation:
Air Force Office of Scientific Research, Boiling AFB, DC 20332
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Abstract

Electrical and optical measurements were performed on p-type GaAs implanted with 1013 Er ions/cm2 at an energy of 1 MeV. The samples were annealed at 650, 750, 850, or 900 °C for 15 seconds using the rapid thermal annealing technique. Although annealing at 650 °C was insufficient to recover measureable electrical conductivity in the implanted region, Er3+ 4f-4f emissions were still observed. Annealing at 750 TC produced a large concentration of hole traps at EV + 360 meV, and the most intense Er-related emissions at 1.54 μm. The two higher annealing temperatures returned the implanted region to the conductivity of the substrate but resulted in weak Er-related emissions. Two distinct Er-related centers were found, and they are believed to be the cause of the intense and weak emissions, an Er-interstitial and Er substituting for Ga, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 251
Copyright
Copyright © Materials Research Society 1993

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References

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