Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:08:41.257Z Has data issue: false hasContentIssue false

Annealing pressure dependence of Cu2ZnSnSe4 composition and properties

Published online by Cambridge University Press:  12 March 2014

Zhou Yu
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Lian Liu
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Yong Yan
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Shasha Li
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Yaxin Jin
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Yufeng Ou
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Chuanpeng Yan
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Yong Zhang
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China
Yong Zhao*
Affiliation:
Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China School of Materials Science and Engineering, University of New South Wales, Sydney 2052 NSW, Australia
*
*Corresponding author: Phone/fax: +86-28-87600786 E-mail: [email protected]
Get access

Abstract

Cu2ZnSnSe4 (CZTSe) precursor films were deposited by one-step RF sputtering process at room temperature under various sputtering power, and then films were annealed at different pressure of 10-3 Pa and 100 Pa. Films annealed at high vacuum of 10-3 Pa exhibit significant loss of Sn element and they construct with two phases of Cu1.8Se and ZnSe. Higher annealing pressure at 100 Pa can drastically reduce the loss of Sn element and result in single kesterite CZTSe phase of the annealed films. Loss of Se element is found in all the annealed films and the values of [Se]/[Metal] and [Sn]/[Zn] are related with sputtering power. High vacuum annealed films show cracks and porous structure on the surface, meanwhile, films annealed at 100 Pa show compact, densely packed homogeneous morphology.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Jager-Waldau, A., Sol. Energy Mater. Sol. Cells 95, 15091517 (2011).10.1016/j.solmat.2010.12.033CrossRefGoogle Scholar
Andersson, B. A., Prog, Photovoltaics, 8, 6176 (2000).10.1002/(SICI)1099-159X(200001/02)8:1<61::AID-PIP301>3.0.CO;2-63.0.CO;2-6>CrossRef3.0.CO;2-6>Google Scholar
Wang, K., Gunawan, O., Todorov, T., Shin, B., Chey, S. J., Bojarczuk, N. A., Mitzi, D., and Guha, S., Appl. Phys. Lett. 97, 143508 (2010).10.1063/1.3499284CrossRefGoogle Scholar
Barkhouse, D., Gunawan, O., Gokmen, T., Todorov, T., and Mitzi, D., Prog. Photovoltaics 20, 6 (2012).10.1002/pip.1160CrossRefGoogle Scholar
Repins, I., Beall, C., Vora, N., DeHart, C., Kuciauskas, D., Dippo, P., To, B., Mann, J., Hsu, W.-C., Goodrich, A. et al. ., Sol. Energy Mater. Sol. Cells101, 154 (2012).Google Scholar
Redinger, A., Hoenes, K., Fontane, X., Izquierdo-Roca, V., Saucedo, E., Valle, N., Perez-Rodriguez, A., and Siebentritt, S., Appl. Phys. Lett. 98, 101907 (2011).10.1063/1.3558706CrossRefGoogle Scholar
Tanaka, K., Fukui, Y., Moritake, N., and Uchiki, H., Sol. Energy Mater. Sol. Cells 95, 838 (2011).10.1016/j.solmat.2010.10.031CrossRefGoogle Scholar
Chen, S. Y., Gong, X. G., Walsh, A., and Wei, S. H., Appl. Phys. Lett. 96 , 021902 (2010)10.1063/1.3275796CrossRefGoogle Scholar
Hergert, F. and Hock, R., Thin Solid Films 515, 5953 (2007)10.1016/j.tsf.2006.12.096CrossRefGoogle Scholar
Weber, A., Mainz, R., and Schock, H. W., J. Appl. Phys. 107, 013516 (2010).10.1063/1.3273495CrossRefGoogle Scholar
Redinger, A. and Siebentritt, S., Appl. Phys. Lett. 97, 092111 (2010).10.1063/1.3483760CrossRefGoogle Scholar