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Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.
Published online by Cambridge University Press: 25 February 2011
Abstract
By combining RBS/channeling, Mössbauer spectroscopy, and TEM measurements on implanted Sn in Silicon, the solid solubility has been determined at 1025°C, 1075°C, and 1188°C to be respectively, 6.1 , 4.8 , 3.1·1020 cm-3.
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- Copyright © Materials Research Society 1990
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