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Annealing of Grown-in Defects in Gaas

Published online by Cambridge University Press:  26 February 2011

S. Dannefaer ,
P. Mascher  and
D. Kerr
S. Dannefaer
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Manitoba R3B 2E9 Canada
P. Mascher
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Manitoba R3B 2E9 Canada
D. Kerr
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Manitoba R3B 2E9 Canada
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Abstract

Detailed analyses of positron lifetimes in GaAs have shown that an omnipresent type of defect acts as a shallow positron trap. This trap modifies the experimentally determined bulk lifetime to higher values and also influences the trapping rate into deep traps such as vacancies. It is suggested that the shallow trap likely is associated with boron. An annealing stage around 450°C is found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 471
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Dannefaer, S., Mascher, P. and Kerr, D.. To be published.Google Scholar
2.Stucky, M., Corbel, C., Geffroy, B., Moser, P. and Hautojarvi, P. in: Defects in Semiconductors. Ed. by von Bardeleben, H.J.. Materials Science Forum. Vol.10–12, p. 265 (Trans. Tech. Publications 1986).Google Scholar
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