Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T06:56:26.976Z Has data issue: false hasContentIssue false

Annealing of CoxCu1-x / Cu Multilayers

Published online by Cambridge University Press:  10 February 2011

Jörg Ebert
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Mohammad Ghafari
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Branko Stahl
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Horst Hahn
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Get access

Abstract

In the multilayer system cobalt / copper at the second antiferromagnetic coupling maximum (2. AFM) with a copper thickness of dCu = 2,2 nm it is possible to reduce magnetoresistive hysteresis by the use of either very thin Co-layers or by alloyed magnetic layers Co1-xCux. It was possible to achieve values for the giant magnetoresistance effect of GMR ≈ 20 % for as prepared samples. A heat treatment was applied to study the degeneration of the system. For annealing at moderate temperatures (Tanneal ≤ 250°C) an increase up to GMR ≈ 25 % was observed. Annealing at slightly higher temperatures lead to an rapid decrease in the GMR effect. To study the structural changes the method of x-ray reflectivity was utilized showing changes in interface roughness as well as in bilayer thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Baibich, M.N., Fert, J.M., Nguyen Van Dau, F., Petroff, F., Pys. Rev. Lett. 61, 2472 (1988)Google Scholar
2 Wang, D., Anderson, J., and Daughton, J.M., IEEE Trans. Magn. 33 (5), 3520 (1997)Google Scholar
3 Kubinski, D.J. and Holloway, H., J. Appl. Phys. 79 (3), 1661 (1996)Google Scholar
4 Kubinski, D.J. and Holloway, H., J. Appl. Phys. 82 (1), 322 (1997)Google Scholar
5 Massalski, T.B., Okamato, H., Subramanian, P.R., and Kacprzak, L. (Editors), Binary Alloy Phase Diagrams, 2nd edition, Volume 1, Metals Park, Ohio, American Society for Metals ASM InternationalGoogle Scholar
6 Gangopadhayay, S., Shen, J.X., Kief, M.T., Barnard, J., and Parker, M.R., IEEE Trans. Magn. 31 (6), 3933 (1995)Google Scholar
7 Kamiko, M., Furukawa, R., Kim, K.-Y., Iwanami, M., and Yamamoto, R., J. Magn. Magn. Mater. 198 – 199, 716 (1999)Google Scholar
8 Kikuchi, H., Bobo, J.-F., and White, R.L., IEEE Trans. Magn. 33 (5), 3933 (1997)Google Scholar
9 Daughton, J.M., US Patent No. 5,617,071, April 1, 1997 Google Scholar
10 Rafaja, D., Ebert, J., Miehe, G., Martz, N., Knapp, M., Stahl, B., Ghafari, M., Hahn, H., and Fuess, H., submitted to J. Phys.Google Scholar
11 Ebert, J., Stahl, B., Ghafari, M., and Hahn, H., to be publishedGoogle Scholar