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Annealing Behavior of The Photoluminescence Lines in CdTe and Znx Cd1−x Te Single Crystals

Published online by Cambridge University Press:  21 February 2011

J. Gonzalez-Hernandez ,
A. Reyes-Mena ,
Elias Lopez-Cruz ,
D.D. Allred  and
Worth P. Allred
J. Gonzalez-Hernandez
Affiliation:
Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN. Apdo. Postal 14-740, 07000 México, D. F
A. Reyes-Mena
Affiliation:
Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN. Apdo. Postal 14-740, 07000 México, D. F
Elias Lopez-Cruz
Affiliation:
Departamento de Física del Instituto de Ciencias, Universidad Autónoma de Puebla, Apdo. Postal J-48, Puebla 72570, Pue. México
D.D. Allred
Affiliation:
Physics and Astronomy Department, Brigham Young University, Provo, UT
Worth P. Allred
Affiliation:
Galtech Semiconductor Materials Corp., Mt. Pleasent, UT
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Abstract

The main lines in the photoluminescence spectra of Zn1Cd1−xTe single crystals grown by a modified Bridgman method in the compositional range of 0 ≤ X ≤ 0.25 have been identified. All crystals show only near-band-edge emission. To assist in the identification, various samples with different compositions were annealed under a Cd atmosphere. In the pure crystals, the prominent (A°,X) bound exciton line, as well as the doublet at longer wavelengths, disappear after the annealing. In contrast, the treatments do not change significantly the PL spectra of the mixed crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 33
Copyright
Copyright © Materials Research Society 1990

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References

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