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Anisotropy of the Porous Silicon Photoluminescence

Published online by Cambridge University Press:  15 February 2011

G. Polisski ,
B. Averboukh ,
D. Kovalev  and
F. Koch
G. Polisski
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
B. Averboukh
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
D. Kovalev
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
F. Koch
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
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Abstract

Polarization memory effect in the porous Si photoluminescence is studied. The anisotropy of the linear polarization degree is found in the samples etched with polarized light-assistance. The effect is explained by the anisotropie in plane distribution of the elongated Si crystallites. Under resonant optical excitation four-fold anisotropy of the photoluminescence polarization, linked to the crystalline axes of the bulk Si substrate, is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 541
Copyright
Copyright © Materials Research Society 1997

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References

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