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Anisotropic Transport of Impurities in Ion Mixing

Published online by Cambridge University Press:  25 February 2011

S. Matteson ,
J.A. Keenan  and
R.F. Pinizzotto
S. Matteson
Affiliation:
Texas Instruments IncorporatedP.O. Box 225936 MS-147Dallas, TX 75265
J.A. Keenan
Affiliation:
Texas Instruments IncorporatedP.O. Box 225936 MS-147Dallas, TX 75265
R.F. Pinizzotto
Affiliation:
Texas Instruments IncorporatedP.O. Box 225936 MS-147Dallas, TX 75265
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Abstract

Experimental investigations of the redistribution of a thin (1nm) Sn marker layer lying between two thicker dissimilar layers (Ge and Si) during 360 keV As ion irradiation are reported. Several permutations of layer arrangements were tested, i.e. Si/Sn/Ge, Ge/Sn/Si, Si/Sn/Si and Ge/Sn/Ge. It was also found that in the dissimilar “diffusion” couples, the Sn drifts in the Ge rich direction, regardless of whether the Ge is on the surface side or the substrate side of the marker. This phenomemon of anisotropic transport is interpreted as a drift induced by a gradient in the “diffusion” coefficient. The radiation resistance of concentrated alloys is discussed in the light of this phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 43
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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