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Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions

Published online by Cambridge University Press:  22 February 2011

R.S. Goldman ,
K. Rammohan ,
A. Raisanen ,
M. Goorsky ,
L.J. Brillson ,
D.H. Rich ,
H.H. Wieder  and
K.L. Kavanagh
R.S. Goldman
Affiliation:
University of California at San Diego, La Jolla, CA 92093-0407
K. Rammohan
Affiliation:
University of Southern California, Los Angeles, CA 90089-0241
A. Raisanen
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
M. Goorsky
Affiliation:
University of California at Los Angeles, Los Angeles, CA 90024
L.J. Brillson
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
D.H. Rich
Affiliation:
University of Southern California, Los Angeles, CA 90089-0241
H.H. Wieder
Affiliation:
University of California at San Diego, La Jolla, CA 92093-0407
K.L. Kavanagh
Affiliation:
University of California at San Diego, La Jolla, CA 92093-0407
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Abstract

We have investigated the structural and electronic properties of partially strain-relaxed InxGal-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [110] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 349
Copyright
Copyright © Materials Research Society 1994

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References

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