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Anisotropic and Selective Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma

Published online by Cambridge University Press:  25 February 2011

W-S. Pan  and
A. J. Steckl
W-S. Pan
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, N.Y. 12181
A. J. Steckl
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute Troy, N.Y. 12181
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Abstract

The use of CHF3 plus oxygen plasma to achieve selective and anisotropic patterning of SiC thin films in the reactive ion etching (RIE) mode is reported. Experiments were performed using various levels of oxygen percentage (from zero to 90%), pressure (from 20 to 300 mTorr) and power (from 100W to 350W). Anisotropic etching of SiC with a vertical-to-lateral etch ratio in excess of 8:1 was measured for a CHF3 + 75%02 mixture at 20mT pressure and 200W RF power. Under these conditions, the SiC etch rate was measured to be 400 A/min and the selectivity over Si was approximately 2.2:1. The effect of the cathode DC potential and emission intensity of various species in the plasma on the SiC and Si etch rates is considered.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 157
Copyright
Copyright © Materials Research Society 1987

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References

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