Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T15:29:42.890Z Has data issue: false hasContentIssue false
  • English
  • Français

Anisotropic and Enhanced FET Performance in Rubbing-Aligned CuPc Thin Film Transistor with Top Gate Structure

Published online by Cambridge University Press:  01 February 2011

Masanao Goto ,
Yohei Watakabe ,
Hideo Takezoe  and
Ken Ishikawa
Masanao Goto
Affiliation:
[email protected], Tokyo Institute of Technology, Dept. Org. and Polym. Mater., S8-42, 2-12-1, O-Okayama, Meguro, Tokyo, 152-8552, Japan
Yohei Watakabe
Affiliation:
[email protected], Tokyo Institute of Technology, Dept. of Org. and Polym. Mater., S8-42, 2-12-1, O-Okayama, Meguro, Tokyo, 152-8552, Japan
Hideo Takezoe
Affiliation:
[email protected], Tokyo Institute of Technology, Dept. of Org. and Polym. Mater., S8-42, 2-12-1, O-Okayama, Meguro, Tokyo, 152-8552, Japan
Ken Ishikawa
Affiliation:
[email protected], Tokyo Institute of Technology, Dept. of Org. and Polym. Mater., S8-42, 2-12-1, O-Okayama, Meguro, Tokyo, 152-8552, Japan
Get access

Abstract

the proceeding of the poster session

Keywords

organicorganometallicelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA11-08
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ofuji, M., Inaba, K., Omote, K., Hoshi, H., Takanishi, Y., Ishikawa, K., and Takezoe, H., Jpn. J. Appl. Phys. 41, 5467 (2002).Google Scholar
2. Ofuji, M., Inaba, K., Omote, K., Hoshi, H., Takanishi, Y., Ishikawa, K., and Takezoe, H., Jpn. J. Appl. Phys. 42, 7520 (2003).Google Scholar
3. Ofuji, M., Ishikawa, K., Takezoe, H., Inaba, K., and Omote, K., Appl. Phys. Lett. 86, 062114 (2005).Google Scholar
4. Horowitz, G., Adv. Funct. Mater. 13, 53 (2003).Google Scholar
5. Shang, L., Wang, C., and Liu, M., Appl. Phys. Lett. 88, 202111 (2006).Google Scholar
6. Chwang, A. B. and Frisbie, C. D. J. Appl. Phys. 90, 1342 (2001).Google Scholar