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Angle Resolved XPS Analysis of Surface Region Defects in Rapid Thermal Annealed Antimony Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

S.N. Kumar ,
G. Chaussemy ,
A. Laugier ,
B. Canut  and
M. Charbonnier
S.N. Kumar
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne, France
G. Chaussemy
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne, France
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne, France
B. Canut
Affiliation:
Département de Physique des Materiaux
M. Charbonnier
Affiliation:
Département de Chimie Appliquée, Université Claude Bernard Lyon 1, 69622 Villeurbanne, France.
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Abstract

Angle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 927
Copyright
Copyright © Materials Research Society 1990

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