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Analysis of the Structure of Light-emitting Porous Silicon by Raman Scattering

Published online by Cambridge University Press:  15 February 2011

Zhifeng Sui ,
Patrick P. Leong ,
Irving P. Herman ,
Gregg S. Higashi  and
Henryk Temkin
Zhifeng Sui
Affiliation:
Department of Applied Physics and Microelectronies Sciences Laboratories, Columbia University, New York, NY 10027
Patrick P. Leong
Affiliation:
Department of Applied Physics and Microelectronies Sciences Laboratories, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Department of Applied Physics and Microelectronies Sciences Laboratories, Columbia University, New York, NY 10027
Gregg S. Higashi
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
Henryk Temkin
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
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Raman spectra from a thick porous silicon film (∼100 μm) that strongly emits in the visible (∼ 6350 Å) at room temperature are obtained. An asymmetric peak with a Raman shift of ∼ 508 - 510 cm−1 and a width of ∼ 40 cm−1 is seen in every spectrum. This Raman feature resembles that of μc-Si, suggesting that the local structure of the porous silicon is a network of interconnected crystalline silicon islands with the island size in the nanometer range., and that the, shape of the islands is more sphere-like than rod-like. The characteristic dimension of the islands in these porous silicon films is estimated to be ∼ 2.5 - 3.0 nm on the basis of an empirical model calculation of phonon confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 13
Copyright
Copyright © Materials Research Society 1992

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