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Analysis of the Si-ON-Insulator Structure by Modeling of the Interface Atomic Arrangement

Published online by Cambridge University Press:  22 February 2011

T. Saito ,
Y. Yamakoshi  and
I. Ohdomari
T. Saito
Affiliation:
School of Science and Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku-ku, Tokyo 160, JAPAN.
Y. Yamakoshi
Affiliation:
School of Science and Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku-ku, Tokyo 160, JAPAN.
I. Ohdomari
Affiliation:
School of Science and Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku-ku, Tokyo 160, JAPAN.
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Abstract

A structure of interface between crystalline Si (c-Si) and underlying SiO2 film formed by Si-on-Insulator technique has been analyzed by modeling of interface atomic arrangement. A ball-and-spoke model of a stoichiometrically abrupt c-Si/SiO2 interface has been constructed by connecting a (100) c-Si lattice and a continuous random network model of amorphous SiO2 . A Keating-type potential has been used for the interatomic interactions. The bond bending distortion energy of both Si and O atoms increases at the interface, while the bond stretching energy is negligibly small. The amount of interface energy due to bond distortion is 0.20J/m2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 531
Copyright
Copyright © Materials Research Society 1984

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References

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