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Analysis of Temperature and Stress Profiles Induced by a cw Line Scanned Electron Beam in <100> Oriented Silicon

Published online by Cambridge University Press:  15 February 2011

G. G. Bentini  and
L. Correra
G. G. Bentini
Affiliation:
C.N.R. - Istituto Lamel, Via Castagnoli 1, 40126 Bologna, Italy
L. Correra
Affiliation:
C.N.R. - Istituto Lamel, Via Castagnoli 1, 40126 Bologna, Italy
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Abstract

Evaluation of thermal profiles along the scan direction of a line shaped e-beam as well as the topographic distribution of the thermally induced stresses have been performed by solving the heat diffusion equation for several incident power values. The resulting stresses have been computed in the “nearly isotropic” approximation but taking into account that the slip planes, in <100> oriented silicon crystals, are{lll} and the slip directions in the plane are <110>.The threshold of damage introduction has been evaluated by comparing the computed stresses with the yield stress of the material at any annealing temperature. Experimental observations based on X-Ray topography have been performed in order to study the damage introduction on <100> silicon samples annealed in the same conditions used for stress computation. A very good agreement between computed and experimental results was found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 241
Copyright
Copyright © Materials Research Society 1983

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References

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