Hostname: page-component-6bf8c574d5-w79xw Total loading time: 0 Render date: 2025-02-18T05:47:17.270Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon

Published online by Cambridge University Press:  21 February 2011

G. Teichert ,
J. Pezoldt ,
V. Cimalla ,
O. Nennewitz  and
L. Spiess
G. Teichert
Affiliation:
TU Ilmenau, Institut für Werkstoffe, Postfach 0565, D-98684 Ilmenau, Germany
J. Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 0565, D-98684 Ilmenau, Germany
V. Cimalla
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 0565, D-98684 Ilmenau, Germany
O. Nennewitz
Affiliation:
TU Ilmenau, Institut für Werkstoffe, Postfach 0565, D-98684 Ilmenau, Germany
L. Spiess
Affiliation:
TU Ilmenau, Institut für Werkstoffe, Postfach 0565, D-98684 Ilmenau, Germany
Get access

Abstract

RHEED pattern of SiC layers on both (100) and (111)Si grown by carbonization were studied. Different deviations from the single crystalline structure were found ranging from twinning up to changes in the orientation and textured growth. Special attention was drawn on lattice relaxation and morphology evolution during the growth of the formed SiC. Relationships between the occurrence of typical RHEED pattern and the morphology and process parameters are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 17
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nishino, S., Hazuki, Y., Matsunami, H. and Tanaka, T., J. Electrochem. Soc., 127 2674 (1980).Google Scholar
2 Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H. and Eichhorn, G., J. Phys. IV, Colloq. C5, suppl. J. Phys. II, 5 C5–863(1995).Google Scholar
3 Becker, J.P., Long, R.G. and Mahan, J.E., J. Vac. Sci. Technol. A12 174 (1994).Google Scholar
4 Niles, D.V. and Höchst, H., Mater. Res. Soc. Symp. Proc., 208, 243 (1991).Google Scholar
5 Ball, C.A.B., van der Merve, J.H., in Dislocations in Solids, Vol. 6, edited by Nabarro, F.R.N. (North-Holland, Amsterdam, 1983), Chap. 27.Google Scholar
6 Tu, K.-N., Mayer, J.W. and Feldman, L.C.,Electronic Thin Film Science for Electrical Engineers and Material Scientists (Macmillan Publishing Company, New York, 1976), p. 166.Google Scholar
7 Cimalla, V. and Pezoldt, J., Mater. Res. Soc. Symp. Proc., 355, 33 (1995).Google Scholar
8 Steckl, A.J., Mogren, S.A., Roth, M.W. and Li, J.P., Appl. Phys. Lett., 60 1495 (1992).Google Scholar
9 Maeda, K., Suzuki, K., Fujita, S., Ichihara, M. and Hyodo, S, Phil. Mag., A57 573 (1988).Google Scholar
10 Chevrier, J., Cruz, A., Berbezier, I. and Derrien, J., Acta Phys. Slovaca, 44 227 (1994).Google Scholar
11 Yang, H.-N., Wang, G.-C. and Lu, T.-M., Diffraction from Rough Surfaces and Dynamic Growth Fronts (World Scientific, Singapore, 1993), Chap. VI.Google Scholar
12 Joyce, B.A., Neave, J.H., Dobson, P.J. and Larsen, P.K., Phys. Rev., B29, 814 (1984).Google Scholar