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Analysis of Photoluminescence Efficiency of Annealed GaInNAs Quantum Well Grown by Solid Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Ng Tien Khee ,
Yoon Soon Fatt  and
Fan Weijun
Ng Tien Khee
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University Nanyang Avenue, Singapore 639798.
Yoon Soon Fatt
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University Nanyang Avenue, Singapore 639798. Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
Fan Weijun
Affiliation:
School of Electrical and Electronic Engineering (Block S1) Nanyang Technological University Nanyang Avenue, Singapore 639798.
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Abstract

The carrier dynamics of a 7.5 nm GaInNAs quantum well (QW) are studied by photoluminescence (PL) at a low temperature regime of 4 K to 150 K. The PL emission efficiency of the QW is initially evaluated to examine the recombination mechanisms in the QW. A dual-activation-energy model is later found to fit the integrated PL intensity vs. temperature curve better than a single-activation-energy model. The two states that correspond to the above activation energies could have resulted in a much faster PL intensity quenching in the GaInNAs QW as compared to that of a reference GaInAs QW. One of the states is identified as a localized state that traps carriers at a low temperature range of less than ∼100 K. The other state has a larger quenching effect at temperatures higher than 100 K and this state is not studied in this paper. By fitting the original PL spectra with two Gaussian functions, the temperature dependent PL integrated intensity of both Gaussian functions was also studied to further characterize the GaInNAs QW. The analysis gives evidence of the localization behaviour in this QW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.14
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. C Larson, M., Kondow, M., Kitatani, T., Nakahara, K., Tamura, K., Inoue, H., and Uomi, K., IEEE Photonics Technology Letters 10 188 (1998).Google Scholar
2. Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., Fan, W. J., J. Vac. Sci. Technol., 20(3) 964 (2002).Google Scholar
3. Pan, Z., Li, L. H., Zhang, W., Lin, Y. W., Wu, R. H., Appl. Phys. Lett., 77(2) (2000) 214.Google Scholar
4. Kitatani, T., Kondow, M., Tanaka, T., J. Crystal Growth, 227–228 (2001) 521.Google Scholar
5. Largeau, L., Bondoux, C., Patriarche, G., Asplund, C., Fujioka, A., Salomonsson, F., and Hammar, M.. Appl. Phys. Lett., 79(12) 1795 (2001).Google Scholar
6. Ng, T. K., Yoon, S. F., Fan, W. J., Loke, W. K., Ng, S. T. (Unpublished).Google Scholar