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Analysis of Nitrogen, Boron, and Hydrogen of i-BN Films Fabricated by the Ion Beam Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

J-P. Hirvonen  and
J. K. Hirvonen
J-P. Hirvonen
Affiliation:
Department of Physics, University of Helsinki, 00170 Helsinki, Finland
J. K. Hirvonen
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
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Abstract

The concentrations of the main constituents of hard i-BN films produced by the ion beam assisted deposition were measured using the nuclear resonance reactions 11B(p,γ) 12C at Ep = 163 keV, and 15N(p,αγ) 12C at Ep = 429 key, respectively. The hydrogen contamination of the samples was investigated using the forward recoil spectroscopy (FRES) technique with a 2 MeV He+ beam. Some complementary analyses of carbon and oxygen were performed using (d,p) and (d,α) -reactions.

Hyperstoichiometric boron concentration were found in almost all films. The relative concentrations of nitrogen and boron were also slightly dependent on the deposition conditions as well as the deposition temperature. Contrary to this, hydrogen contamination, that was generally at a low level with few exceptions, was more independent of these parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 85
Copyright
Copyright © Materials Research Society 1989

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References

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