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Analysis of Measured I(V) Relations for Electron Emission from Insulating Diamond Films on Various SI Substrates

Published online by Cambridge University Press:  10 February 2011

K. L. Jensen ,
A. Göhl  and
G. Müller
K. L. Jensen
Affiliation:
Code 6840, ESTD, Naval Research Laboratory, Washington, DC 20375-5000USA
A. Göhl
Affiliation:
Fachbereich Physik, Universität Wuppertal, D-42097 Wuppertal, GERMANY
G. Müller
Affiliation:
Fachbereich Physik, Universität Wuppertal, D-42097 Wuppertal, GERMANY
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Abstract

In this work, we shall analyze the performance of a geometrical interface roughness model to estimate current from p-type silicon into insulating diamond and compare the performance of that model to experimental data. A minimum number of adjustable parameters are invoked. While the model qualitatively accounts for trends in the experimental data, in particular, the shift from negative to positive slope on a Fowler Nordheim plot of the I(V) data, it does so at the expense of demanding ellipsoid parameters that appear to be unreasonable. We therefore conclude that a simple geometrical field enhancement model of interface roughness is insufficient to account for the current observed, and thus the theory must be augmented by a more comprehensive electron transport model at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 603
Copyright
Copyright © Materials Research Society 2000

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References

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