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Analysis of Leakage Currents through PLD Grown Ultrathin a-LaGdO3 Based High-k Metal Gate Devices

Published online by Cambridge University Press:  28 June 2013

Shojan P. Pavunny ,
Pankaj Misra ,
Reji Thomas ,
Ashok Kumar ,
James F. Scott  and
Ram S. Katiyar
Shojan P. Pavunny
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
Pankaj Misra
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
Reji Thomas
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
Ashok Kumar
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA. Materials Physics and Engineering Division, National Physical Laboratory, CSIR, New Delhi, 110 012, India.
James F. Scott
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA. Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE, UK.
Ram S. Katiyar
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
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Abstract

A detailed analysis of leakage current density-gate voltage measurements of gate stacks composed of PLD grown ultra thin films of LaGdO3 (LGO) on p-type silicon substrates with 8.4 Å EOT is presented. Temperature dependent leakage measurements revealed that forward bias current was dominated by Schottky emission over trap assisted tunneling below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of the reverse bias current was found to be a combination of Schottky emission and trap assisted tunneling. Low leakage current densities in the range from 2.3×10-3 to 29×10-3 A/cm2 were recorded for films with EOT from 1.8 to 0.8 nm, that are at least four or more orders below the ITRS specifications and its SiO2 competitors.

Keywords

laser ablationdielectricelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1561: Symposium CC – Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory , 2013 , mrss13-1561-cc05-08
Copyright
Copyright © Materials Research Society 2013 

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