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Analysis of Implanted Boron Profiles Across the Si-SiO2 Interface by Secondary Ion Mass Spectrometry.

Published online by Cambridge University Press:  22 February 2011

V. R. Deline ,
N. M. Johnson  and
L. A. Christel
V. R. Deline
Affiliation:
Charles Evans And Associates, San Mateo, CA 94402,
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304,
L. A. Christel
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305.
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Abstract

Depth profiles of boron implanted across the SiO2-Si interface have been measured by secondary ion mass spectrometry and compared with model calculations of the impurity distributions. Analysis of the sputtering and ion yield processes near the interface are used to reconstruct the measured boron profile for comparison with the model calculations. Applicability of the method of profile reconstruction near the interface to other materials and impurities is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 649
Copyright
Copyright © Materials Research Society 1984

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References

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