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Analysis of growth rate of silicon nanowires

Published online by Cambridge University Press:  01 February 2011

J. Kikkawa ,
Y. Ohno  and
S. Takeda
J. Kikkawa
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Osaka 560–0043, Japan
Y. Ohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Osaka 560–0043, Japan
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Osaka 560–0043, Japan
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Abstract

We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365 °C and 495 °C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.25
Copyright
Copyright © Materials Research Society 2005

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References

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