Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:14:11.561Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Grain Boundaries, Twin Boundaries and Te Precipitates in Cd1−xZnxTe Grown bY High-Pressure Bridgman Method

Published online by Cambridge University Press:  10 February 2011

J. R. Heffelfinger ,
D. L. Medlin  and
R. B. James
J. R. Heffelfinger
Affiliation:
Sandia National Laboratories, Materials and Engineering Sciences Center P. O. Box 969, Livermore, CA 94551
D. L. Medlin
Affiliation:
Sandia National Laboratories, Materials and Engineering Sciences Center P. O. Box 969, Livermore, CA 94551
R. B. James
Affiliation:
Sandia National Laboratories, Materials and Engineering Sciences Center P. O. Box 969, Livermore, CA 94551
Get access

Abstract

Grain boundaries and twin boundaries in commercial Cd1−xZnxTe, which is prepared by a high-pressure Bridgeman technique, have been investigated with transmission electron microscopy, scanning electron microscopy, infrared-light microscopy and visible-light microscopy. Boundaries inside these materials were found to be decorated with Te precipitates. The shape and local density of the precipitates were found to depend on the particular boundary. For precipitates that decorate grain boundaries, their microstructure was found to consist of a single, saucer-shaped grain of hexagonal Te (space group P3121). Analysis of a Te precipate by selected-area diffraction revealed the Te to be aligned with the surrounding Cd1−xZnxTe grains. This alignment was found to match the (111) Cd1−xZnxTe planes with the (0111) planes of hexagonal Te. Crystallographic alignments between the Cd1−xZnxTe grains were also observed for a high-angle grain boundary. The structures of the grain boundaries and the Te/C1−xZnxTe interface are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 33
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. James, R. B., Schlesinger, T. E., Lund, J., and Schieber, M., in Semiconductors and Semimetals Vol.43, edited by Schlesinger, T. E. and James, R. B. (Academic Press, San Diego, CA 1995) pp. 335–381.Google Scholar
2. Heffelfinger, J. R., Medlin, D. L., Yoon, H., Hermon, H. and James, R. B., in Hard X-ray and Gamma-ray Detector Physics. Optics and Application, edited by Hoover, R. B. and Doty, F. P. (SPIE Proc. 3115, Bellingham, WA, 1997) pp. 40–50.Google Scholar
3. Doty, F. P., Cozzatti, J. P. and Schomer, J. P., in Hard X-ray and Gamma-ray Detector Physics. Optics and Application, edited by Hoover, R. B. and Doty, F. P. (SPIE Proc. 3115, Bellingham, WA, 1997) pp. 51–55.Google Scholar
4. Doty, F. P., Butler, J. F., Schetzina, J. F., and Bowers, K. A., J. Vac. Sci. Technol. B10, 1418 (1992).Google Scholar
5. Hage-Ali, M. and Siffert, P., in Semiconductors and Semimetals Vol.43, edited by Schlesinger, T. E. and James, R. B. (Academic Press, San Diego, CA 1995) pp. 219–257.Google Scholar
6. Smith, F. T. J., Met. Trans 1, 617 (1970).Google Scholar
7. DeNobel, D., Philips Research Publications 14, 361 (1959).Google Scholar
8. Yadava, R. D. S., Bagai, R. K. and Borle, W. N, J. Electr. Mat. 21, 1001 (1992).Google Scholar
9. Williams, D. J., in Properties of Narrow Gap Cadmium Based Compounds, edited by Capper, P. (INSPEC, Exeter, England 1994) pp. 510–515.Google Scholar
10. Vydyanath, H. R., Ellsworth, J., Kennedy, J. J., Dean, B., Johnson, C. J., Neugebauer, G. T., Sepich, J., and Liao, P.-K., J. Vac. Sci. Technol. B10, 1476 (1992).Google Scholar
11. Lee, T. S., Parks, J. W., Jeoung, Y. T., Kim, H. K., Chun, C. H., Kim, J. M., Park, I. H., Chang, J. M., Kim, S. U. and Park, M. J., J. Electr. Mat. 24, 1053 (1995).Google Scholar
12. Sochinskii, N. V, Diegues, E., Pal, U., Piqueras, J., Fernandez, P., Agullorueda, A. F., Semi. Sci. Tech. 10, 870 (1995).Google Scholar
13. Sen, S. and Stannard, J. E., in Semiconductors for Room-Temperature Radiation Detector Applications, -edited by James, R. B., Schlesinger, T. E., Siffert, P. and Franks, L. (Mater. Res. Soc. Proc. 320, Pittsburgh, PA 1993) p. 391.Google Scholar
14. CRC Handbook of Chemistry and Physics, edited by Lide, David R. (CRC Press Inc. Boca Raton, FL 1997) p. 12–83.Google Scholar