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Analysis of Defects in Laser Annealed GaAs*

Published online by Cambridge University Press:  15 February 2011

John Fletcher ,
J. Narayan  and
D. H. Lowndes
John Fletcher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
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Abstract

The nature and depth distributions of residual damage in ion implanted and pulsed ruby laser annealed GaAs have been studied using both plan-view and cross-section transmission electron microscopy (TEM) specimens for high dose (1.0 × 1015 cm−2) Zn+, Se+ and Mg+ implants. It was found that laser energy densities above 0.36 J/cm2 were required to remove the implantation damage, this threshold energy density giving good agreement with that indicated by electrical activation measurements. Laser induced surface degradation of the GaAs was present even for energy densities as low as 0.25 J/cm2, and more severe damage, with the introduction of dislocations near the surface, was present for energy densities above 0.8 J/cm2. The use of thin SiO2 layers for encapsulation during laser annealing was found to substantially reduce this surface degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 421
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Research sponsored by the Division of Materials Science, U. S. Department of Energy under contract W-7405-eng-26 with the Union Carbide Corporation.

References

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