Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:40:17.429Z Has data issue: false hasContentIssue false

Analysis of composition changes across the Si/SiOx interface using fresnel fringe contrast analysis

Published online by Cambridge University Press:  22 February 2011

Frances M. Ross
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
W. M. Stobbs
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
Get access

Abstract

Fresnel fringe contrast analysis and high resolution electron microscopy are used in conjunction to measure compositional and structural changes across the Si/SiOx interface with atomic resolution.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. d'Anterroches, C., J. Microsc. Spectrosc. Electron. 9, 147 (1984)Google Scholar
2. Mott, N. F., Phil. Mag. B 55, 117 (1987)Google Scholar
3. Stobbs, W. M. and Saxton, W. O., Mic, J., in press (1988)Google Scholar
4. Ness, J. N., Stobbs, W. M. and Page, T. F., Phil. Mag. A 54, 679 (1986)CrossRefGoogle Scholar
5. Baxter, C. S. and Stobbs, W. M., Nature 322, 814 (1986)CrossRefGoogle Scholar
6. Ross, F. M., Britton, E. G. and Stobbs, W. M., in Proceedings of AEM, Manchester, September 1987, to be publishedGoogle Scholar
7. Ross, F. M. and Stobbs, W. M., to be published in Surf. Int. Anal. (1988)Google Scholar
8. Knowles, K. M., Ross, F. M. and Stobbs, W. M., in Electron Microscopy and Analysis 1987, edited by Brown, L. M., Inst. Phys. Conf. Ser 90 (Adam Hilger, Bristol) 1988 Google Scholar
9. Stobbs, W. M. and Ross, F. M., in Electron Microscopy and Analysis 1987, edited by Brown, L. M., Inst. Phys. Conf. Ser 90 (Adam Hilger, Bristol) 1988 Google Scholar
10. Meakin, D., Stobbs, W. M., Stoemenos, J. and Economou, N., submitted to Appl. Phys. Let.Google Scholar
11. Ourmazd, A., Taylor, D. W., Rentschler, J. and Bevk, J., Phys. Rev. Lett. 59, 213 (1987)CrossRefGoogle Scholar
12. Grunthaner, F. J. and Grunthaner, P. J., Mat. Sci. Rep. 1, 65Google Scholar
13. Grovenor, C. R. M., in Silicon on Insulator and Thin Film Transistor Technology, edited by Chiang, A., Geirs, M. W. and Pfeiffer, L. (Mater. Res. Soc. Proc. 53, Pittsburgh, PA 1986)Google Scholar