Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:42:43.347Z Has data issue: false hasContentIssue false

Analysis of CMP planarization performance for STI process

Published online by Cambridge University Press:  18 March 2011

Manabu Tsujimura
Affiliation:
Deputy Group Executive, Precision Machinery Group NISSEI AROMA SQUARE 5-37-1
Ebara Corporation
Affiliation:
Deputy Group Executive, Precision Machinery Group NISSEI AROMA SQUARE 5-37-1
Kamata Ohta-ku
Affiliation:
Fax & e-mail: 81-3-5714-6670 81-3-5714-6081 [email protected] Co-authors: < Hisanori Matuo, Hirokuni Hiyama,Ebara >< Masahiro Ota, Dr.Eng. Tokyo Metropolitan University>
Tokyo Japan
Affiliation:
Fax & e-mail: 81-3-5714-6670 81-3-5714-6081 [email protected] Co-authors: < Hisanori Matuo, Hirokuni Hiyama,Ebara >< Masahiro Ota, Dr.Eng. Tokyo Metropolitan University>
Get access

Abstract

It has recently been reported that some waviness may affect STI CMP yield. CMP is designed primarily to planarize relatively with large r scale than small topography. However, there may be a range of wafer topographies in which STI patterns are over-polished, depending on peak-to-valley variations and frequencies. Permissible peak-to-valley variations and frequencies are calculated by determining whether the difference in polish quantities between the peak and valley is less than permissible values, such as 10 nm, 20 nm, and 30 nm. Reports indicate that slurry selectivity can decrease this effect, although with certain disadvantages.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Fukuda, T., JEIDA Nanotopography Report (II) (Japan Electronics Industry Development Association), AWG-TF Meeting at SEMICON/West, San Francisco, July 2000.Google Scholar