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An X-Ray Study of Domain Structure and Stress in Pd2Si Films at Pd-Si Interfaces
Published online by Cambridge University Press: 15 February 2011
Extract
The domain structures of palladium and Pd2Si as well as their crystallographic relationship to the silicon substrates were determined on Si(111) and Si(100) samples by mapping X-ray diffraction pole figures. X-ray diffraction topography and rocking curve measurements were carried out for the silicon substrates in order to detect the presence of elastic and/or plastic deformation in the substrates caused by silicide formation. The stresses in the silicide films were determined from the bending of the silicon substrates using X-ray diffraction techniques.
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- Copyright © Materials Research Society 1982
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