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An Overview of Dry Etching Damage

Published online by Cambridge University Press:  22 February 2011

Stephen J. Fonash
Stephen J. Fonash*
Affiliation:
Electronic Materials and Processing Research Laboratory The Pennsylvania State University University Park, PA 16802
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Abstract

Dry etching can inadvertently lead to two very different types of damage -- voltage stress damage due to dielectric wearout and plasma exposure damage due to particle and photon flux impingement. Voltage stress damage due to charge-up has beem widely studied. It is often areal in distribution; hence, it can be studied even with simple capacitor structures and capacitance-voltage measurements. All plasma exposure damage has an edge-type distribution. Consequently it requires more complicated structures and measurements for its detection.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 977
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Fonash, S. J., “An overview of dry etching damage and contamination effects”, J. Electrochem. Soc., Vol. 137, 3885,(1990).Google Scholar
2 Shin, Hyungchevl, Jha, Neeta, Qian, Xue-Yu, Hills, Graham, and Hu, Chenming, “Plasma Etching Charge-up Damage to Thin Oxides”, Solid State Technol. p. 29–36, August, 1993.Google Scholar