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An Organic FET structure for unconventional substrates

Published online by Cambridge University Press:  11 February 2011

Annalisa Bonfiglio ,
Fulvia Mameli ,
Ornella Sanna  and
Laurence Lutsen
Annalisa Bonfiglio
Affiliation:
INFM - Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy INFM S3 - nanoStructures and bioSystems at Surfaces, Via Campi 213/A, 41100 Modena, Italy
Fulvia Mameli
Affiliation:
INFM - Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy
Ornella Sanna
Affiliation:
INFM - Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy
Laurence Lutsen
Affiliation:
IMEC-IMOMEC Division, L.U.C. Campus, SBG Department, Building D, B-3590 Diepenbeek, Belgium
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Abstract

A structure for organic TFTs suitable for being transferred on unusual substrates is described in each technological step. The proposed device consists in a “bottom-structure” assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage is to avoid the substrate because the insulator itself is able to support the whole structure. For this reason, application to any kind of substrates after the built-in process is possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 736: Symposium D – Electronics on Unconventional Substrates–Electrotextiles and Giant-Area Flexible Circuits , 2002 , D4.6
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Dimitrakopoulos, C., Malenfant, P. R. L., Adv. Mater. 14, 99 (2002)Google Scholar
Dimitrakopoulos, C. D., Furman, B. K., Graham, T., Hegde, S., and Purushothaman, S., Synth. Met. 92, 47 (1998).Google Scholar
Forrest, S., MRS Bull., 108 (Feb. 2001)Google Scholar
4. Horowitz, G., Adv. Mater. 10, 365 (1998).Google Scholar
5. Garnier, F., Chem. Phys. 227, 253 (1998)Google Scholar
6. Katz, H. E., J. Mater. Chem. 7, 369 (1997).Google Scholar
7. Lutsen, L., Adriaensens, P., Becker, H., Van Breemen, A.J., Vanderzande, D., Gelan, J., Macromol., 32, 6517 (1999)Google Scholar
8. Lin, Y.Y., Gundlach, D.J., Nelson, S., Jackson, T.N., IEEE Elect. Dev. Lett. 18, 606 (1997)Google Scholar
9. Shtein, M., Mapel, J., Benzinger, J.B., Forrest, S.R., Appl. Phys. Lett. 81 (2), 268 (2002)Google Scholar
10. Bao, Z., Dodabalapur, A., Lovinger, A.J., Appl. Phys. Lett 69 (26), 4108 (1996)Google Scholar