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An Optimization Study of Thermal Stability of W/GaAs Schottky Gates

Published online by Cambridge University Press:  22 February 2011

Marcio Favoretio  and
Jacobus W. Swart
Marcio Favoretio
Affiliation:
DSIF/FEE and LPD/IFGW - UNICAMP, C.P. 6101, Campinas, SP, 13.081-970, Brazil
Jacobus W. Swart
Affiliation:
DSIF/FEE and LPD/IFGW - UNICAMP, C.P. 6101, Campinas, SP, 13.081-970, Brazil
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Abstract

This paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 273
Copyright
Copyright © Materials Research Society 1993

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References

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