Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:24:57.780Z Has data issue: false hasContentIssue false
  • English
  • Français

An Optical Gap Calibration Applied to the Case of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

D. E. Sweenor ,
S. K. O'Leary  and
B. E. Foutz
D. E. Sweenor
Affiliation:
Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
S. K. O'Leary
Affiliation:
Faculty of Engineering, University of Regina, Regina, Saskatchewan, Canada 54S 0A2
B. E. Foutz
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
Get access

Abstract

There are many different empirical means whereby the optical gap of an amorphous semiconductor may be defined. We analyze some hydrogenated amorphous silicon data with respect to a number of these empirical measures for the optical gap. By plotting these various gap measures as a function of the breadth of the optical absorption tail, we provide a means of relating these disparate measures of the optical gap. The applicability of this calibration to another set of hydrogenated amorphous silicon data is investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 55
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 ( 1981 ).Google Scholar
[2] Cody, G. D., in Hydrogenated Amorphous Silicon, Vol. 21B of Semiconductors and Semimetals, edited by Pankove, J. I. ( Academic, New York, 1984 ), p. 11.Google Scholar
[3] Sweenor, D. E., O'Leary, S. K., and Foutz, B. E., Solid State Commun. ( in press ).Google Scholar
[4] Tauc, J., Grigorovici, R., and Vancu, A., Phys. Stat. Sol. 15, 627 ( 1966 ).Google Scholar
[5] Cody, G. D., Brooks, B. G., and Abeles, B., Solar Energy Mater. 8, 231 (1982).Google Scholar
[6] Sokolov, A. P., Shebanin, A. P., Golikova, O. A., and Mezdrogina, M. M., J. Phys. Cond. Matt. 3, 9887 ( 1991 ).Google Scholar
[7] Dawson, R. M., Li, Y. M., Gunes, M., Heller, D., Nag, S., Collins, R. W., Wronski, C. R., Bennett, M., and Li, Y. M., Mater. Res. Soc. Symp. Proc. 258, 595 ( 1992 ).Google Scholar
[8] Freeman, E. C. and Paul, W., Phys. Rev. B 20, 716 ( 1979 ).Google Scholar
[9] Persans, P. D., Ruppert, A. F., Chan, S. S., and Cody, G. D., Solid State Commun. 51, 203 ( 1984 ).Google Scholar
[10] Cody [2] points out that changes in the optical gap of an amorphous semiconductor may be more easily determined than the absolute magnitude of the gap itself. It is for this reason that the calibration curve depicted in Figure 4 is cast relative to the Tauc gap.Google Scholar
[11] Viturro, R. E. and Weiser, K., Philos. Mag. B 53, 93 ( 1986 ).Google Scholar