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An NMR Study of Hydrogen in Si02 Films on Silicon

Published online by Cambridge University Press:  25 February 2011

David H. Levy
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
K. K. Gleason
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have used solid state nuclear magnetic resonance (NMR) spectroscopy to study both “wet” and “dry” thermally grown films of SiO2 on silicon substrates. For the 5000 § wet film, grown at 1050 °C we observed a single Lorentzian line of 6 kHz HWHM (half width at half maximum). For the 500 § dry film, we observed a convolution of two lines: a) a Lorentzian of 4 kHz HWHM and b) a Gaussian of 20 kHz HWHM. The hydrogen distributions in both oxides are interpreted as a function of these lines.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Grunthaner, P.J. and Hecht, M.H., Grunthaner, F.J., J. Appl.Phys., 61(2), 629(1986)Google Scholar
2. Revesz, A.G., J. Electrochem. Soc., 126, 122 (1979)Google Scholar
3. Poindexter, E.H. and Caplan, P.J., J. Vac. Sci. Technol. A, 6(3), 1352 (1988)Google Scholar
4. Poindexter, E.H. and Caplan, P.J., Progress in Surf. Sci., 14, 201 (1983)Google Scholar
5. Pantelides, S.T., Phys. Rev. Lett., 57, 2979 (1986)Google Scholar
6. Beckman, K.H. and Harrick, N.J., J. Electrochem. Soc., 118, 614, (1971)Google Scholar
7. Tsong, I.S. and Monkowski, M.D., Monkowski, J.R., Miller, P.D., Mosk, C.D., Appleton, B.R., Wintenburg, A.L., “Investigation of Hydrogen and Chlorine at the Si/Si02 Interface” from The Preparation of MOS Insulators, Lucovsky, ed. (1980)Google Scholar
8. Marwick, A.D. and Young, D.R., J. Appl. Phys. 63(7), 2291 (1988)Google Scholar
9. Kaxiras, E. and Joannopoulos, J.D., Phys. Rev. B, 37(15), 8842 (1988)Google Scholar
10.Aldrich Library of NMR Spectra” Vol. 2, Pouchert, C.J. ed., (Aldrich, Milwaukee 1983) p. 1004,1008Google Scholar
11. Van Vleck, J.H., Phys. Rev. 74, 1168 (1948)Google Scholar
12. Rhim, W.-K. and Elleman, D.D., Vaughn, R.W., J. Chem. Phys., 59(7), 3740(1973)Google Scholar
13. Abragam, A., Principles of Nuclear Magnetism, (Oxford University Press, 1961)Google Scholar
14. Reimer, J.A. and Vaughn, R.W., Knights, J.C., Phys. Rev. B, 24(6), 3360 (1981)Google Scholar
15. Jeffrey, F.R. and Lowry, M.E., J. Appl. Phys., 52(9), 5529 (1981)Google Scholar