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An Investigation of Radiation Damage Induced by Hydroxyl and Oxygen Impurities In BaF2 Crystal

Published online by Cambridge University Press:  21 February 2011

Chen Lingyan
Affiliation:
Department of Physics, Tongji University, Shanghai 200092, P. R. China
Gu Mu
Affiliation:
Department of Physics, Tongji University, Shanghai 200092, P. R. China
Wang Liming
Affiliation:
Department of Physics, Tongji University, Shanghai 200092, P. R. China
Xiang Kaiiiua
Affiliation:
Department of Physics, Tongji University, Shanghai 200092, P. R. China
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Abstract

The radiation effect in hydrolyzed BaF2 was investigated through tile changes in their optical absorption and EPR spectra before and after γ-irradiation. The resulti demonstrated that hydroxyl and oxygen can be easily introduced into BaF2by means of a hydrolysis, the most likely modes are OH ions substituting for fluorine and O2– ions substituting for fluorine associated with charge-compensating fluorine vacancies O2–F+. Combining with the Hartree-Fock-Slater local-density discrete variational (HFS-Xα-DV) cluster calculation on some possible defects related to hydrogen and oxygen impurities, we propose that the radiation damage observed in hydrolyzedBaF2 can be explained in terms of OH and O2– — F+ dissociation through a radiolysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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