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An Investigation of Buried Layer Formation by 40keV Oxygen Implantation Into Silicon

Published online by Cambridge University Press:  28 February 2011

Y. Li ,
J. A. Kilner ,
R. J. Chater ,
T. J. Tate ,
P. L. F. Hemment  and
A. Nejim
Y. Li
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, UK
J. A. Kilner
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, UK
R. J. Chater
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, UK
T. J. Tate
Affiliation:
Department of Electronic and Electrical Engineering, Imperial College, London SW7 2BP, UK
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
A. Nejim
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
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Abstract

Device grade single crystal <100> silicon wafers have been implanted with 40keV oxygen ions over a dose range of 2×1017 to 8×1017/cm2 at a temperature of 5507±10°C. The specimens have been analyzed, both before and after high-temperature annealing at 1320°C for six hours, using SIMS, RBS, and TEM. During implantation a continuous buried SiO2 layer forms when the dose after which the buried SiO2 layer grows primarily toward the surface. After annealing samples implanted with the doses of both 2×1017 and 3×1017/cm2 it was observed that a defective SIMOX like structure was formed. Implanting with a dose of 4×1017/cm2 results in pit formation in the silicon overlayer. For the sample implanted with a higher dose of 5×1017/cm2, a non-continuous poly-crystalline silicon “overlayer” was formed. It would thus appear that when a single step implantation route is chosen, there is a dose (or layer thickness) limit for the production of a thin film SIMOX structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 115
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Kilner, J.A., Electrochem. Soc. Proc. 90–6 (Montreal, Canada, May, 1990), p96. Google Scholar
2. Namavar, F., Cortesi, E., Buchanan, B.L., and Sioshansi, P., Proc. 1989 IEED SOS/SOI Tech. Conf. (Stateline, NV, Oct., 1989), p117;Google Scholar
Namavar, F., Cortesi, E., Manke, J.M., Kalkhoran, N.M., Buchanan, B.L., Pinnizzotto, R.F., and Yang, H., Proc. 1991 IEED SOS/SOI Tech. Conf. (Vail Valley, Colorado, Oct., 1991), p108. CrossRefGoogle Scholar
3. Littlewood, S.D. and Kilner, J.A., J. Appl. Phys. 63, 2173 (1988).CrossRefGoogle Scholar
4. Chater, R.J., Kilner, J.A., Hemment, P.L.F., Reeson, K.J., and Peart, R.F., edited Electrochem Soc. Proc. 86–4 (Pennington, NJ, 1986), p652. Google Scholar
5. Gill, S.S. and Wilson, I.H., Thin Solid Films, 55, 435(1978).Google Scholar
6. Li, Y., Kilner, J.A., Robinson, A.K., Hemment, P.L.F., and Marsh, C.D., J. Appl. Phys., 70, 3605(1991).CrossRefGoogle Scholar
7. Robinson, A.K., Marsh, C.D., Bussmann, U., Kilner, J.A., Li, Y., Vanhellemont, J., Reeson, K.J., Hemment, P.L.F., and Booker, G.R., Nucl. Instr. and Meth. B55, 555(1991).Google Scholar
8. Li, Y., Kilner, J.A., Hemment, P.L.F., Robinson, A.K., Zhang, J.P., Reeson, K.J., Marsh, C.D., and Booker, G.R., Appl. Phys. Lett., 59 No.24 (1991) (Dec. 9).Google Scholar
9. Ziegler, J.F., Biersack, J.P., and Littmark, , in The Stopping and Ranges of Ions in Solids, (Pergamon, new York, 1985).Google Scholar
10. Kilner, J.A., Chater, R.J., and Littlewood, S.D., Proc. of the 6th Int. Conf. on SIMS, eds. Benninghoven, , Huber, , and Werner, (J. Wiley and Sons, London, 1987), p299. Google Scholar
11. Griffin, G.J., Ph. D.Thesis, Imperial College, London, UK, 1989.Google Scholar
12. Reeson, K.J., Robinson, A.K., Hemment, P.L.H., Marsh, C.D., Christenson, K.N., Booker, G.R., Chater, R.J., Kilner, J.A., Harbeke, G., Steigmeier, E.F., and Celler, G.K., Microelectronic Eng. 8, 163(1988).Google Scholar
13. Profile Code, Implant Science Corp., Danvers, MA, 1990.Google Scholar
14. Robinson, A.K., Li, Y., Marsh, C.D., Chater, R.J., Hemment, P.L.F., and Kilner, J.A., Mat. Sci. and Eng. B (in press).Google Scholar