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An Interfacial Phase Transformation in CoSi2/Si(111)

Published online by Cambridge University Press:  25 February 2011

D.J. Eaglesham ,
R.T. Tung ,
R.L. Headrick ,
I.K. Robinson  and
F. Schrey
D.J. Eaglesham
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
R.T. Tung
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
R.L. Headrick
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
I.K. Robinson
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
F. Schrey
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

A new type of phase transformation at the interface is described in CoSi2/Si(111) B (i.e. twinned) epilayers. Thin (25Å) CoSi2 films are codeposited at room temperature on Si (111) with a Si-rich surface layer, and subsequently annealed. Plan-view transmission electron microscopy (TEM) shows that these films have low symmetry, the interface being characterised by a shift “R” between (220) planes in CoSi2 and Si. X-ray diffraction from “R” films differs from otherwise identical films either grown without Si-rich surface layer, or not annealed, which have the conventional cubic structure (“C”); R-CoSi2 cannot be indexed on a single reciprocal lattice. Cross-section high-resolution TEM suggests the presence of a separate (non-cubic) layer ≈9Å thick at the interface in these films. Annealing of R-CoSi2in-situ in the TEM shows a reversible transformation R⇔C occuring at temperatures varying from 180°C to 150K, depending on layer stoichiometry. Rt⇔C is thus a quasi-equilibrium, diffusionless transformation. We propose that R-CoSi2 lowers interfacial free energy for certain stoichiometries, but that bulk constraints stop the entire layer from transforming.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 141
Copyright
Copyright © Materials Research Society 1990

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References

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