Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-12T22:24:31.232Z Has data issue: false hasContentIssue false
  • English
  • Français

An Interfacial Phase Transformation in CoSi2/Si(111)

Published online by Cambridge University Press:  25 February 2011

D.J. Eaglesham ,
R.T. Tung ,
R.L. Headrick ,
I.K. Robinson  and
F. Schrey
D.J. Eaglesham
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
R.T. Tung
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
R.L. Headrick
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
I.K. Robinson
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
F. Schrey
Affiliation:
AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

A new type of phase transformation at the interface is described in CoSi2/Si(111) B (i.e. twinned) epilayers. Thin (25Å) CoSi2 films are codeposited at room temperature on Si (111) with a Si-rich surface layer, and subsequently annealed. Plan-view transmission electron microscopy (TEM) shows that these films have low symmetry, the interface being characterised by a shift “R” between (220) planes in CoSi2 and Si. X-ray diffraction from “R” films differs from otherwise identical films either grown without Si-rich surface layer, or not annealed, which have the conventional cubic structure (“C”); R-CoSi2 cannot be indexed on a single reciprocal lattice. Cross-section high-resolution TEM suggests the presence of a separate (non-cubic) layer ≈9Å thick at the interface in these films. Annealing of R-CoSi2in-situ in the TEM shows a reversible transformation R⇔C occuring at temperatures varying from 180°C to 150K, depending on layer stoichiometry. Rt⇔C is thus a quasi-equilibrium, diffusionless transformation. We propose that R-CoSi2 lowers interfacial free energy for certain stoichiometries, but that bulk constraints stop the entire layer from transforming.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 141
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tung, R.T. in Electron Microscopy Evaluation of Electronic Materials, NATO Adv. Workshop, Plenum Press, Ed. Cherns, D. (1988)Google Scholar
[2] Gibson, J.M., Bean, J.C., Poate, J.M., and Tung, R.T., Appl. Phys. Lett. 41, 818 (1982).Google Scholar
[3] Fischer, A.E.M.J., Vlieg, E., Veen, J.F. van der, Clausenitzer, M., and Materlik, G., Phys. Rev, B36, 4769, (1987).Google Scholar
[4] Zegenhagen, J., Huang, K.-G., Hunt, B.D., and Schowalter, L.J., Appl. Phys. Lett. 51, 1176 (1987).Google Scholar
[5] Hamann, D.R., Phys. Rev. Lett. 60, 313 (1988).Google Scholar
[6] Hoek, P.J. van der, Ravenek, W., and Baerends, E.J., Phys. Rev. Lett. 60, 1743 (1988).Google Scholar
[7] Rossi, G., Jin, X., Santaniello, A., DePadova, P., and Chandesris, D., Phys. Rev. Lett. 62, 191 (1989).Google Scholar
[8] Bulle-Lieuwma, C.W.T., Jong, A.F. de, Ommen, A.H. van, Veen, J.F. ven der, and Vrimoth, J., Appl. Phys. Lett. 55, 648 (1989).Google Scholar
[9] Robinson, I.K., Waskiewicz, W.K., Tung, R.T., and Bohr, J., Phys. Rev. Lett. 57, 2714 (1986).Google Scholar
[10] Jamieson, D.N., Bai, G., Kao, Y.C., Nieh, C.W., Nicolet, M.-A., and Wang, K.L., MRS Symp. Proc., 91, 479 (1987).Google Scholar
[11] Tung, R.T., Batstone, J.L., and Yalisove, S.M., J. Electrochem. Soc (1989), in press.Google Scholar
[12] Farrow, R.F.C., Robertson, D.S., Williams, G.M., Cullis, A.G., Jones, G.R., Young, I.M., and Davies, P.N.J., J. Cryst. Growth 54, 507 (1981).Google Scholar