Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T13:43:15.920Z Has data issue: false hasContentIssue false
  • English
  • Français

An Integrated Molecular Dynamics and Monte Carlo Approach to Study Epitaxial Deposition of Silicon

Published online by Cambridge University Press:  21 March 2011

Sweta Somasi ,
Bamin Khomami  and
Ronald Lovett
Sweta Somasi
Affiliation:
Department of Chemical Engineering, Washington University, St. Louis, MO 63130, U.S.A
Bamin Khomami
Affiliation:
Department of Chemical Engineering, Washington University, St. Louis, MO 63130, U.S.A
Ronald Lovett
Affiliation:
Department of Chemistry, Washington University, St. Louis, MO 63130, U.S.A
Get access

Abstract

The length and time scales of an atomistic simulation are often too small for any direct comparison with experimental observations. In order to study the coverage of pits (COPs) found on the Si (100) surface by epitaxial deposition, we first calculate rate of individual steps using molecular dynamics and then define a sequence of Monte-Carlo steps to study the effect of various factors on effective coverage of COPs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O1.8
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mo, Y. W. and Lagally, M. G., Surface Science 248, 313 (1991).Google Scholar
2. Zhang, Z. Y., Lu, Y. T. and Metiu, H., Surface Science 248, L250 (1991).Google Scholar
3. Somasi, S., Khomami, B. and R. Lovett J. Chem. Phys. 113, 4320 (2000).Google Scholar
4. Stillinger, F. H. and Weber, T. A. Phys. Rev. B 31, 5262 (1985).Google Scholar
5. Somasi, S., Khomami, B. and Lovett, R. in preparation.Google Scholar