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An Insulating Overlayer for GaAs

Published online by Cambridge University Press:  25 February 2011

Eugen Tarnow
Affiliation:
Electronic Materials Laboratory, Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Falo Alto, California 94304
S.B. Zhang
Affiliation:
Electronic Materials Laboratory, Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Falo Alto, California 94304
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Abstract

We predict, on the basis of ab-initio total energy calculations, that epitaxial growth of I-VII compounds on III-V substrates can be accomplished (see Fig. 1). We suggest specific combinations of I-VII materials and III-V substrates that minimize lattice mismatch and structural energy cost and show that the interface dipole can be minimal (see Table I). This makes zinc-blende I-VII materials potential candidates for passivating layers, solid state laser applications, III-V window material and hole traps. The work is published in Reference [1].

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Tarnow, Eugen and Zhang, S.B., Applied Physics Letters 58, 2120 (1991). Mat. Res. Soc. Symp.Google Scholar