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An Infrared and Luminescence Study of Tritiated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

L. S. Sidhu ,
T. Kosteski ,
N. P. Kherani ,
F. Gaspari ,
S. Zukotynski  and
W. Shmayda
L. S. Sidhu
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, [email protected]
T. Kosteski
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, [email protected]
N. P. Kherani
Affiliation:
Ontario Hydro Technologies, 800 Kipling Avenue, Toronto, Ontario, Canada, M8Z 5S4
F. Gaspari
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, [email protected]
S. Zukotynski
Affiliation:
ECE Department, University of Toronto, Toronto, Ontario, Canada M5S 3G4, [email protected]
W. Shmayda
Affiliation:
Ontario Hydro Technologies, 800 Kipling Avenue, Toronto, Ontario, Canada, M8Z 5S4
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Abstract

Tritium, has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of β particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hob pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 129
Copyright
Copyright © Materials Research Society 1997

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References

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