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An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation

Published online by Cambridge University Press:  10 February 2011

C. Basceri ,
S. E. Lash ,
C. B. Parker ,
S. K. Streiffer ,
A. I. Kingon ,
M. Grossmann ,
S. Hoffmann ,
M. Schumacher ,
R. Waser  and
S. Bilodeau
...Show all authors
C. Basceri
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
S. E. Lash
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
C. B. Parker
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
S. K. Streiffer
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
M. Grossmann
Affiliation:
RWTH Aachen, D-52056, Germany
S. Hoffmann
Affiliation:
RWTH Aachen, D-52056, Germany
M. Schumacher
Affiliation:
RWTH Aachen, D-52056, Germany
R. Waser
Affiliation:
RWTH Aachen, D-52056, Germany
S. Bilodeau
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810-4169
R. Carlt
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810-4169
P. C. Van Buskirk
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810-4169
S. R. Summerfelt
Affiliation:
Texas Instruments, PO Box 655012, MS 921, Dallas, TX 75265
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Abstract

We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 9
Copyright
Copyright © Materials Research Society 1998

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References

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